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bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 1 (12) document number 85017 silicon npn planar rf transistor electrostatic sensitive device. observe precautions for handling. applications low noise small signal amplifiers up to 2 ghz. this transistor has superior noise figure and associated gain per- formance at uhf, vhf and microwave frequencies. features small feedback capacitance low noise figure high transition frequency 13 579 21 4 3 94 9279 bfp67 marking: 67 plastic case (sot 143) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 95 10831 2 1 43 94 9278 bfp67r marking: 67r plastic case (sot 143r) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 2 1 3 13 653 4 13 566 BFP67W marking: w67 plastic case (sot 343) 1 = collector, 2 = emitter, 3 = base, 4 = emitter absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 2.5 v collector current i c 50 ma total power dissipation t amb 60 c p tot 200 mw junction temperature t j 150 c storage temperature range t stg 65 to +150 c
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 2 (12) document number 85017 maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thja 450 k/w electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit collector cut-off current v ce = 20 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 15 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 10 v collector-emitter saturation voltage i c = 50 ma, i b = 5 ma v cesat 0.1 0.4 v dc forward current transfer ratio v ce = 5 v, i c = 15 ma h fe 65 100 150 electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit transition frequency v ce = 8 v, i c = 15 ma, f = 500 mhz f t 7.5 ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb 0.35 pf collector-emitter capacitance v ce = 8 v, f = 1 mhz c ce 0.25 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 0.85 pf noise figure v ce = 8 v, z s = z sopt , f = 800 mhz, i c = 5 ma f 0.8 db v ce = 8 v, z s = z sopt , f = 800 mhz, i c = 15 ma f 1.5 db v ce = 8 v, z s = 50 , f = 2 ghz, i c = 5 ma f 2.5 db v ce = 8 v, z s = 50 , f = 2 ghz, i c = 15 ma f 3.0 db power gain v ce = 8 v, z s = 50 , z l = z lopt , i c = 15 ma, f = 800 mhz g pe 18 db v ce = 8 v, z s = 50 , z l = z lopt , i c = 15 ma, f = 2 ghz g pe 10 db linear output voltage two tone intermodulation test v ce = 8 v, i c = 15 ma, d im = 60 db, f 1 = 806 mhz, f 2 = 810 mhz, z s = z l = 50 v 1 = v 2 160 mv third order intercept point v ce = 8 v, i c = 15 ma, f = 800 mhz ip 3 26 dbm
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 3 (12) document number 85017 common emitter sparameters z 0 = 50 t amb = 25 c, unless otherwise specified s11 s21 s12 s22 v ce /v i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 100 0.923 18.5 6.55 165.3 0.023 77.7 0.971 7.9 300 0.828 52.3 5.71 141.2 0.060 58.8 0.877 19.9 500 0.721 79.4 4.77 122.9 0.082 45.9 0.772 27.2 800 0.622 110.7 3.72 103.5 0.099 34.2 0.670 33.4 1000 0.582 127.9 3.19 93.5 0.105 29.5 0.629 36.4 1200 0.558 142.8 2.81 84.7 0.108 25.8 0.598 39.3 2 1500 0.546 163.0 2.38 72.7 0.110 21.9 0.569 44.0 1800 0.554 179.4 2.07 61.9 0.109 20.0 0.549 48.7 2000 0.566 169.1 1.90 55.4 0.108 19.7 0.539 52.1 2200 0.609 159.1 1.78 48.8 0.107 20.4 0.537 56.0 2500 0.634 147.9 1.60 40.2 0.111 20.4 0.530 61.9 2800 0.677 138.5 1.47 32.1 0.109 21.8 0.547 69.2 3000 0.707 133.4 1.36 24.9 0.109 22.0 0.530 75.0 100 0.824 28.9 14.21 158.8 0.021 73.5 0.931 13.8 300 0.672 77.3 10.83 128.8 0.048 52.5 0.727 30.1 500 0.564 109.0 8.05 110.6 0.060 43.8 0.580 35.7 800 0.496 139.6 5.66 93.7 0.071 39.7 0.478 37.8 1000 0.477 155.2 4.68 85.4 0.077 38.9 0.446 39.2 1200 0.471 167.9 4.03 78.2 0.082 38.7 0.425 40.9 5 5 1500 0.482 176.1 3.32 68.1 0.090 38.6 0.405 44.7 1800 0.502 162.1 2.83 59.0 0.098 38.8 0.391 49.1 2000 0.526 154.2 2.59 53.3 0.103 38.7 0.386 52.7 2200 0.565 146.0 2.41 47.5 0.109 38.8 0.383 56.7 2500 0.596 137.7 2.14 39.9 0.118 36.7 0.374 63.2 2800 0.642 130.3 1.96 32.5 0.125 36.2 0.385 70.9 3000 0.669 126.2 1.81 26.3 0.128 34.8 0.369 77.1 100 0.689 43.7 23.32 151.2 0.019 68.4 0.872 20.7 300 0.544 103.8 14.92 118.0 0.037 50.7 0.575 38.0 500 0.481 135.0 10.12 102.0 0.047 47.7 0.432 39.6 800 0.450 161.2 6.77 87.8 0.058 48.9 0.357 38.1 1000 0.446 173.3 5.51 80.6 0.066 50.2 0.338 38.2 1200 0.447 176.2 4.69 74.4 0.074 50.4 0.325 39.6 10 1500 0.461 163.5 3.83 65.5 0.087 50.1 0.314 43.5 1800 0.490 152.5 3.24 57.3 0.098 49.2 0.304 48.4 2000 0.511 145.7 2.95 52.0 0.107 48.2 0.301 52.4 2200 0.552 138.7 2.74 46.6 0.115 47.0 0.298 57.2 2500 0.588 132.2 2.44 39.6 0.126 43.4 0.288 64.4 2800 0.626 126.1 2.23 32.6 0.135 41.8 0.299 72.9 3000 0.659 122.6 2.04 27.1 0.138 39.8 0.282 79.8
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 4 (12) document number 85017 s11 s21 s12 s22 v ce /v i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 100 0.598 55.4 29.27 146.1 0.017 67.0 0.820 25.1 300 0.494 120.4 16.71 112.4 0.032 52.0 0.492 40.9 500 0.458 148.6 10.93 98.1 0.041 52.3 0.364 40.1 800 0.440 170.9 7.19 85.1 0.054 55.1 0.306 36.7 1000 0.439 178.4 5.83 78.7 0.063 55.8 0.294 36.6 1200 0.446 169.6 4.94 72.7 0.073 55.9 0.286 37.9 15 1500 0.462 158.5 4.02 64.3 0.087 54.8 0.278 42.2 1800 0.491 148.3 3.40 56.3 0.100 53.3 0.270 47.5 2000 0.515 142.6 3.09 51.4 0.108 51.6 0.267 51.9 2200 0.552 136.3 2.86 46.2 0.117 50.3 0.265 57.1 2500 0.591 130.0 2.54 39.2 0.128 46.1 0.254 648 2800 0.630 124.4 2.32 32.1 0.138 44.0 0.264 73.8 3000 0.667 121.1 2.13 26.8 0.142 41.8 0.249 81.3 100 0.535 65.9 33.32 142.3 0.016 64.1 0.779 28.1 300 0.473 131.4 17.57 109.1 0.029 54.4 0.440 42.2 500 0.451 156.5 11.31 95.7 0.038 56.1 0.327 39.4 800 0.442 176.7 7.37 83.6 0.052 59.0 0.280 35.0 1000 0.444 173.7 5.97 77.3 0.062 59.5 0.272 34.8 1200 0.448 166.2 5.04 71.7 0.072 59.0 0.266 36.3 5 20 1500 0.467 155.2 4.09 63.4 0.087 57.3 0.260 40.9 1800 0.496 146.1 3.45 55.7 0.101 55.2 0.254 46.6 2000 0.519 140.5 3.14 50.8 0.109 53.6 0.251 51.2 2200 0.558 134.5 2.91 45.7 0.118 51.9 0.249 56.6 2500 0.596 128.6 2.59 38.9 0.130 47.4 0.239 64.8 2800 0.633 123.3 2.35 31.9 0.140 45.4 0.249 74.0 3000 0.666 120.3 2.15 26.5 0.144 42.9 0.233 81.9 100 0.487 75.3 35.99 139.4 0.015 64.4 0.746 30.2 300 0.466 139.4 18.03 106.9 0.027 55.7 0.406 42.4 500 0.455 162.0 11.48 94.3 0.036 58.8 0.304 38.3 800 0.446 179.8 7.44 82.6 0.051 61.2 0.265 33.4 1000 0.452 171.2 6.02 76.4 0.062 61.6 0.260 33.3 1200 0.453 163.9 5.08 70.8 0.071 60.7 0.256 34.8 25 1500 0.473 154.0 4.12 62.8 0.086 59.0 0.251 39.8 1800 0.503 144.8 3.48 55.2 0.100 56.6 0.245 45.6 2000 0.528 139.8 3.16 50.3 0.109 54.5 0.243 50.3 2200 0.567 133.8 2.91 45.2 0.118 53.0 0.242 56.0 2500 0.600 128.2 2.60 38.3 0.130 48.4 0.231 64.4 2800 0.640 122.8 2.35 31.5 0.140 46.2 0.241 74.1 3000 0.673 119.4 2.16 26.3 0.144 43.7 0.227 82.0
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 5 (12) document number 85017 s11 s21 s12 s22 v ce /v i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 100 0.456 83.5 37.80 137.1 0.014 62.9 0.718 31.8 300 0.463 144.8 18.20 105.3 0.025 57.6 0.383 42.1 500 0.459 165.7 11.51 93.1 0.035 60.9 0.290 37.0 800 0.451 177.4 7.43 81.7 0.051 63.0 0.258 31.7 1000 0.456 169.1 6.00 75.8 0.061 63.0 0.255 31.8 1200 0.461 162.1 5.05 70.1 0.071 62.1 0.252 33.6 5 30 1500 0.480 152.6 4.11 62.2 0.086 59.9 0.248 38.8 1800 0.510 144.2 3.45 54.5 0.100 57.6 0.242 44.7 2000 0.535 138.3 3.13 49.9 0.109 55.4 0.240 49.7 2200 0.574 133.1 2.91 44.7 0.118 53.7 0.239 55.4 2500 0.610 127.5 2.58 37.8 0.130 49.1 0.228 63.9 2800 0.651 122.3 2.33 31.0 0.140 47.0 0.240 73.5 3000 0.683 119.0 2.14 25.9 0.144 44.4 0.224 81.6 100 0.932 17.9 6.53 165.5 0.022 77.5 0.972 7.6 300 0.834 50.6 5.73 141.8 0.058 59.5 0.884 19.0 500 0.729 76.9 4.80 123.8 0.079 46.9 0.783 26.1 800 0.619 107.7 3.76 104.3 0.095 35.6 0.684 31.9 1000 0.572 124.7 3.24 94.3 0.101 30.6 0.642 35.1 1200 0.550 139.6 2.85 85.5 0.105 27.2 0.613 37.7 2 1500 0.536 160.4 2.42 73.6 0.107 23.2 0.584 42.2 1800 0.536 177.9 2.10 62.8 0.107 21.5 0.562 46.6 2000 0.560 171.4 1.93 56.5 0.106 21.1 0.554 50.1 2200 0.591 161.5 1.82 49.9 0.105 21.8 0.552 53.8 2500 0.612 150.1 1.63 41.1 0.109 21.8 0.545 59.6 2800 0.663 140.1 1.51 32.9 0.108 22.9 0.561 66.7 8 3000 0.691 134.9 1.38 26.0 0.107 23.1 0.544 72.2 8 100 0.841 27.7 14.15 159.3 0.020 74.2 0.934 13.1 300 0.684 73.7 10.91 129.9 0.047 53.8 0.740 28.6 500 0.567 105.1 8.16 111.5 0.059 44.6 0.598 34.1 800 0.487 135.8 5.76 94.6 0.070 40.4 0.497 36.3 1000 0.464 151.6 4.78 86.2 0.076 39.7 0.464 37.5 1200 0.455 164.3 4.11 78.9 0.081 39.6 0.443 39.0 5 1500 0.462 179.0 3.39 69.0 0.089 39.1 0.423 42.7 1800 0.485 164.3 2.90 60.0 0.097 39.5 0.409 46.8 2000 0.507 156.4 2.64 54.4 0.102 39.5 0.403 50.3 2200 0.542 148.2 2.46 48.6 0.107 39.5 0.402 54.1 2500 0.574 139.6 2.20 41.0 0.117 37.2 0.392 60.2 2800 0.622 132.4 2.01 33.7 0.123 36.9 0.403 67.6 3000 0.654 128.0 1.86 27.4 0.126 35.5 0.386 73.5
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 6 (12) document number 85017 s11 s21 s12 s22 v ce /v i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 100 0.719 40.7 23.17 152.1 0.018 69.5 0.876 19.4 300 0.550 98.6 15.11 119.1 0.037 51.3 0.592 36.0 500 0.472 130.0 10.31 102.9 0.046 48.5 0.451 37.7 800 0.431 156.9 6.91 88.5 0.058 49.3 0.376 36.3 1000 0.424 170.1 5.66 81.3 0.065 50.3 0.357 36.6 1200 0.425 179.4 4.80 74.8 0.074 50.8 0.345 37.7 10 1500 0.440 165.8 3.92 66.1 0.085 50.1 0.333 41.5 1800 0.465 154.3 3.32 57.9 0.097 49.3 0.323 46.1 2000 0.490 147.6 3.03 52.9 0.105 48.1 0.320 49.9 2200 0.528 140.5 2.81 47.5 0.113 47.4 0.317 54.2 2500 0.563 133.8 2.50 40.4 0.124 43.7 0.306 61.1 2800 0.605 127.7 2.29 33.5 0.133 42.1 0.316 69.2 3000 0.640 123.7 2.11 27.8 0.136 40.1 0.298 75.7 100 0.635 51.2 29.24 147.1 0.017 67.1 0.828 23.7 300 0.494 114.4 17.00 113.5 0.032 52.2 0.510 38.8 500 0.443 143.6 11.19 98.8 0.040 52.3 0.384 38.1 800 0.419 166.8 7.38 85.7 0.054 55.0 0.326 34.8 1000 0.420 178.9 5.98 79.2 0.063 55.7 0.313 34.7 1200 0.424 172.4 5.08 73.3 0.072 55.9 0.305 36.0 8 15 1500 0.437 160.6 4.13 64.9 0.085 54.6 0.297 40.0 1800 0.465 149.6 3.48 57.1 0.098 53.0 0.289 45.0 2000 0.488 143.8 3.18 52.1 0.107 51.4 0.286 49.3 2200 0.526 137.8 2.94 47.1 0.115 50.4 0.284 54.0 2500 0.561 131.6 2.62 40.0 0.126 46.1 0.272 61.3 2800 0.606 126.0 2.38 33.2 0.136 44.2 0.282 69.9 3000 0.637 122.6 2.19 27.6 0.140 42.0 0.265 76.9 100 0.575 60.1 33.26 143.4 0.016 65.1 0.788 26.6 300 0.464 124.9 17.96 110.1 0.029 54.1 0.459 39.9 500 0.436 151.9 11.60 96.5 0.038 55.7 0.347 37.3 800 0.419 172.8 7.57 84.2 0.052 58.3 0.300 33.2 1000 0.417 176.7 6.14 77.9 0.062 58.9 0.292 33.1 1200 0.422 168.4 5.19 72.0 0.071 58.5 0.286 34.5 20 1500 0.442 157.4 4.21 64.1 0.085 57.1 0.279 38.8 1800 0.470 147.7 3.56 56.4 0.099 55.1 0.272 44.1 2000 0.494 142.2 3.23 51.5 0.107 53.3 0.270 48.7 2200 0.532 136.3 3.00 46.6 0.116 51.8 0.268 53.4 2500 0.568 130.1 2.67 39.6 0.127 47.4 0.257 61.1 2800 0.608 124.6 2.42 33.1 0.137 45.3 0.266 70.1 3000 0.645 121.6 2.23 27.7 0.141 42.8 0.249 77.3
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 7 (12) document number 85017 s11 s21 s12 s22 v ce /v i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 100 0.532 67.6 36.13 140.5 0.014 65.4 0.756 28.4 300 0.453 132.6 18.45 107.8 0.027 55.3 0.425 40.1 500 0.432 157.4 11.78 94.9 0.036 58.4 0.324 36.1 800 0.419 176.9 7.65 83.0 0.051 60.5 0.286 31.5 1000 0.419 173.7 6.18 77.0 0.061 61.0 0.281 31.5 1200 0.428 166.0 5.22 71.3 0.071 60.1 0.276 33.1 8 25 1500 0.445 155.4 4.24 63.4 0.085 58.4 0.271 37.9 1800 0.478 146.2 3.57 55.8 0.099 56.3 0.264 43.3 2000 0.500 140.9 3.24 51.0 0.108 54.4 0.262 47.8 2200 0.537 135.3 3.00 46.0 0.117 52.4 0.261 52.9 2500 0.575 129.0 2.68 39.1 0.128 48.3 0.250 60.7 2800 0.616 124.3 2.43 32.5 0.138 46.1 0.260 70.0 3000 0.651 121.1 2.23 27.4 0.142 43.6 0.242 77.3
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 8 (12) document number 85017 typical characteristics (t amb = 25 c unless otherwise specified) 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 t amb ambient temperature ( 5 c ) 96 12159 p total power dissipation ( mw ) tot figure 1. total power dissipation vs. ambient temperature 0 2000 4000 6000 8000 10000 0 1020304050 i c collector current ( ma ) 12867 f transition frequency ( mhz ) t v ce =8v f=500mhz figure 2. transition frequency vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 v cb collector base voltage ( v ) 12868 c collector base capacitance ( pf ) cb f=1mhz figure 3. collector base capacitance vs. collector base voltage 0 1 2 3 4 5 0 5 10 15 20 25 i c collector current ( ma ) 12869 f noise figure ( db ) f=800mhz f=2ghz v ce =8v z s =50 figure 4. noise figure vs. collector current
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 9 (12) document number 85017 v ce = 8 v, i c = 15 ma , z 0 = 50 s 11 12 974 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 1 2 5 3.0 ghz 0.5 1.0 0.1 0.3 2.0 figure 5. input reflection coefficient s 21 12 976 0 5 90 5 180 5 90 5 12 24 150 5 120 5 60 5 30 5 120 5 60 5 30 5 3.0 ghz 1.0 0.1 0.3 figure 6. forward transmission coefficient s 12 12 975 0 5 90 5 180 5 90 5 0.08 0.16 150 5 120 5 60 5 30 5 120 5 150 5 60 5 30 5 3.0 ghz 1.0 0.1 2.0 figure 7. reverse transmission coefficient s 22 12 977 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 3.0 ghz 1.0 0.1 0.3 figure 8. output reflection coefficient
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 10 (12) document number 85017 dimensions of bfp67 in mm 96 12240 dimensions of bfp67r in mm 96 12239
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 11 (12) document number 85017 dimensions of BFP67W in mm 96 12237
bfp67/bfp67r/BFP67W vishay semiconductors www.vishay.com rev. 3, 20-jan-99 12 (12) document number 85017 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423

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